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Acquisition of IGBT (onsemi) NXH50M65L4C2ESG TMPIM 650 V 50 A Converter-Inverter-PFC Module

Acquisition of IGBT (onsemi) NXH50M65L4C2ESG TMPIM 650 V 50 A Converter-Inverter-PFC Module

Source:本站Time:2023-09-14Views:

Sale and acquisition of IGBT (onsemi) NXH50M65L4C2ESG TMPIM 650 V 50 A converter-Inverter-PFC module.introNXH50M65L4C2ESG is a transfer molded power module with an advanced substrate that includes a converter-inverter-PFC circuit. The circuit consists…

Sale and acquisition of IGBT (onsemi) NXH50M65L4C2ESG TMPIM 650 V 50 A converter-Inverter-PFC module.

intro

NXH50M65L4C2ESG is a transfer molded power module with an advanced substrate that includes a converter-inverter-PFC circuit. The circuit consists of four single-phase converters with 75 A, 1600 V rectifiers, six 50 A with reverse diodes, 600 V IGBTs, two 75 A with reverse diodes, two 2-channel interlaced PBCS with 650 V PFC IGBTs, and two 50 A, 650 V PFC diode and an NTC thermistor.

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peculiarity

• 2-channel interlaced PFC with a wide switching frequency of 18 kHz~65 kHz

• Low thermal resistance substrate for low thermal resistance

• The clearance between the pin and the radiator is 6 mm

• Compact 73 mm X 40 mm X 8 mm package

• Solderable pins

• Thermistor

• No lead, no halogen /BFR, RoHS compliant

Technical parameter

IGBT type: -

Configuration: Three inverters

Voltage-emitter breakdown (Max) : 650 V

Current - Collector (Ic) (Max) : 50 A

Power - Maximum: 20 mW

Vce(on) (Max.) for different Vge and Ic: 2.2V@15V, 75A

Current-collector cutoff (Max.) : 250 µA

Input capacitance (Cies) for different Vce: 2.608 nF @ 20 V

Input: single-phase bridge rectifier

NTC thermistor: Yes

Operating temperature: -40°C ~ 150°C (TJ)

Installation type: Through hole

Package/Housing: 27-PowerDIP module (1.858", 47.20mm)

Supplier device package: 27-DIP

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• Industrial motor drive

• Servo driver

If necessary, please contact Mr. Chen:

Email: sales@hkmjd.com

Company website: www.hkmjd.com

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