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Shenzhen Mingjiada Electronics Co., Ltd.
Model

MPQ5031GRE MPQ4272GVE 88Q2112

Service Telephone:86-755-83294757

Product Classification

Integrated Circuit Chip

Ethernet Power Line Transceivers Phase Locked Loop - PLL RF Sampling Transceiver Logic-Level Converter Interface IC - Multi-Rate Retimer SAS Expander Power Amplifier Module Clock/Timing,Oscillators Clock/Timing - Nano Timer Digital Crosspoint Switch Ultrasound Transceivers Clock/Timing - Delay Line Card Reader Controller Logic - Gates and Inverters Transmitter Isolated Comparator High Speed Comparator Interface - Multi-Rate Retimer USB Controller CCD Signal Processor Photometric Front Ends Isolation Amplifiers Digital Display Controller

IoT/IGBT Module

2G Module 4G Module 5G Module IoT Module New Energy Module Vehicle-Grade Module Smart Module Memory Module Cellular IoT Module Satellite Communication Module GNSS Module LPWA Modules IoT Chips Wireless Communication Module

Filter

SAW Filter BAW Filter Wi-Fi Filter 2.4GHz Wi-Fi Bandpass Filter Active filter RF Filter High Pass Filters 5GHz Wi-Fi Bandpass Filter 6GHz Wi-Fi Bandpass Filter

Wireless Connection

Wi-Fi 6 Bluetooth IC Bluetooth 5.1 Bluetooth 5.0 Bluetooth 5.2 Wi-Fi chip Ultra Wideband UWB IC GNSS Receiver Wi-Fi 4 WiFi Modules Bluetooth Low Power Wi-Fi 5 Wi-Fi 7 Wireless NIC Chips Bluetooth Module WiFi Wireless Module Bluetooth Audio SoC

Circuit Protection

Surge suppression IC ESD Suppressors/TVS Diodes Gas Discharge Tubes - GDT / Gas Plasma Arresters TVS - Mixed Technology

Discrete Semiconductor

Transistor - FET, MOSFET - Single Radio frequency transistor Power MOSFET Modules Silicon Carbide (SIC) FET Modules Silicon Carbide (SIC) FETs MOSFET a canale P Transistors - RF FETs, MOSFETs MOSFET Modules Thyristor Diode array module MOSFET Transistor N-Channel MOSFET IGBT Transistor Diodes & Rectifiers Schottky Diodes & Rectifiers Single Zener Diodes Bipolar Transistor Array Power Driver Module Diodes - Rectifiers - Single Transistor - FET, MOSFET - Array Transistor - IGBT - Module Transistor - UGBT, MOSFET - Single

Power Management

Gallium Nitride (GaN) ICs Linear Regulator LDO AC-DC Controller And Voltage Regulator DC-DC Power Products Voltage Reference Battery Management Power over Ethernet (PoE) controller

Connectors

USB Connector Circular Connector Automotive Connector Card Edge Connectors Board-To-Board & Mezzanine Connectors FFC, FPC ( Flat Flexible ) Connectors Backplane Connectors Rectangular Connectors Coaxial Connector (RF) Rectangular Connectors - Arrays, Edge Type, Mezzanine (Board to Board)

Sensor

Optical Sensors Flow Sensors Board Mounted Humidity Sensor Biometric Sensors Speed Sensors Humidity Sensor Hall effect current sensor Ultrasonic Sensor Optical Sensors,Photodiodes Humidity, Moisture Sensitive Sensors Optical detectors and sensors-Infrared detectors Board Mount Temperature Sensor Gas Sensor Position Sensor Industrial Millimetre Wave Radar Sensors Automotive Millimetre Wave Radar Sensors Image sensor Radar sensor Motion sensor - Gyroscope Ultrasonic receiver, transmitter (distance measurement) Optical Biosensing Module Pressure Sensors Current Sensors Capacitive Touch Sensors

Memory

NOR Flash Nonvolatile Memory Random access memory RAM Static random access memory SRAM Synchronous dynamic random access memory SDRAM F-RAM LPDDR5 uMCP EEPROM Solid State Drives - SSD Standard Serial EEPROM Automotive Grade Serial EEPROM eMMC Pseudo Static Random Access Memory (PSRAM) Erasable Programmable ROM NAND Flash Universal Flash Storage - UFS Dynamic random access memory DRAM Memory - Modules

Embedded and Networking Processors

Secure Processors
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ON NTMFS4C028NT1G N-Channel MOSFET Transistor - FET

ON NTMFS4C028NT1G N-Channel MOSFET Transistor - FET

Source:our siteTime:2022-06-02Views:

Mingjiada brand new original ON NTMFS4C028NT1G N-channel MOSFET transistor - FET, large stock in stock, quality assurance, welcome to consult!

The NTMFS4C028 N-Channel MV MOSFETs are 30V, 40V and 60V MOSFETs produced using an advanced power trench process combined with shielded gate technology. The process is optimized to minimize on-resistance, plus excellent soft body diodes to maintain excellent switching performance.


Product properties

FET type N channel

Technology MOSFET (Metal Oxide)

Drain-source voltage (Vdss) 30 V

Current at 25°C - Continuous Drain (Id) 9A (Ta)

Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V

On-resistance (max) at various Id, Vgs 5.8 milliohms @ 30A, 10V

Vgs(th) (max) at different Id 2.1V @ 250µA

Gate charge (Qg) (max) at different Vgs 10.9 nC @ 4.5 V

Vgs (max) ±20V

Input Capacitance (Ciss) at Vds (max) 1252 pF @ 15 V

FET function -

Power Dissipation (Maximum) 760mW (Ta), 25.5W (Tc)

Operating temperature -55°C ~ 150°C (TJ)

Mounting Type Surface Mount

Vendor Device Package 5-DFN (5x6) (8-SOFL)

Package/Case 8-PowerTDFN, 5-Lead


Application

CPU power

DC-DC converter


E-mail: sales@hkmjd.com

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