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Shenzhen Mingjiada Electronics Co., Ltd.
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VSC7427XJG-02 VSC7425XJG-02 88E6190-A0-TLA2C000

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Inductive sensor Hall Effect Latch and Switch Biosensor Time-of-Flight Sensors Sensor Signal Conditioners Optical Sensors Flow Sensors Board Mounted Humidity Sensor Biometric Sensors Speed Sensors Humidity Sensor Hall effect current sensor Ultrasonic Sensor Optical Sensors,Photodiodes Humidity, Moisture Sensitive Sensors Optical detectors and sensors-Infrared detectors Board Mount Temperature Sensor Gas Sensor Position Sensor Industrial Millimetre Wave Radar Sensors Automotive Millimetre Wave Radar Sensors Image sensor Radar sensor Motion sensor - Gyroscope

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ON NTMFS4C028NT1G N-Channel MOSFET Transistor - FET

ON NTMFS4C028NT1G N-Channel MOSFET Transistor - FET

Source:our siteTime:2022-06-02Views:

Mingjiada brand new original ON NTMFS4C028NT1G N-channel MOSFET transistor - FET, large stock in stock, quality assurance, welcome to consult!

The NTMFS4C028 N-Channel MV MOSFETs are 30V, 40V and 60V MOSFETs produced using an advanced power trench process combined with shielded gate technology. The process is optimized to minimize on-resistance, plus excellent soft body diodes to maintain excellent switching performance.


Product properties

FET type N channel

Technology MOSFET (Metal Oxide)

Drain-source voltage (Vdss) 30 V

Current at 25°C - Continuous Drain (Id) 9A (Ta)

Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V

On-resistance (max) at various Id, Vgs 5.8 milliohms @ 30A, 10V

Vgs(th) (max) at different Id 2.1V @ 250µA

Gate charge (Qg) (max) at different Vgs 10.9 nC @ 4.5 V

Vgs (max) ±20V

Input Capacitance (Ciss) at Vds (max) 1252 pF @ 15 V

FET function -

Power Dissipation (Maximum) 760mW (Ta), 25.5W (Tc)

Operating temperature -55°C ~ 150°C (TJ)

Mounting Type Surface Mount

Vendor Device Package 5-DFN (5x6) (8-SOFL)

Package/Case 8-PowerTDFN, 5-Lead


Application

CPU power

DC-DC converter


E-mail: sales@hkmjd.com

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