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ROHM has put the 650V pressure-resistant GaN HEMT*1 "GNP2070TD-Z" in TOLL (TO-LeadLess) packaging into volume production. TOLL packages are not only small in size and excellent thermal performance, but also have excellent current capacity and switching characteristics, which is why they are increasingly used in industrial equipment, on-board equipment, and applications that need to support high power. This time, ROHM outsourced the packaging process to ATX SEMICONDUCTOR (WEIHAI) CO., LTD. (hereinafter referred to as "ATX"), which has a rich track record as a semiconductor afterprocess supplier (OSAT).

In order to achieve a carbon-free society, "improving the efficiency of power supplies and motors, which account for more than half of the world's electricity consumption" has become a global social issue. Power components are the key to improving their efficiency, and new materials such as SiC (silicon carbide) and GaN are expected to further improve the efficiency of various power supplies. ROHM put the 650V voltage withstand GaN HEMT into production in April 2023, and the Power Stage IC in the integrated package of the gate driver and 650V voltage withstand GaN HEMT into production in July 2023. In response to market demands for further smaller, more efficient applications in high-power applications, ROHM has enhanced its 650V GaN HEMT package lineup with an addition to the previous DFN8080 package. Generation 2 components are built into TOLL packages and commercialized.

The second generation GaN on Si chip in the TOLL package has achieved industry-leading numerical performance in terms of device performance indicators (RDS (ON) ×Qoss*2) related to on-resistance and input capacitance. This will help further energy conservation and miniaturization of power systems that require high voltage resistance and high-speed switching. The new product has been put into mass production in December 2024 (sample price 3,000 yen/piece, excluding tax), and has started e-commerce sales, and can be purchased through e-commerce platforms.

For the mass production of new products, ROHM uses the component design technology and its own advantages accumulated in the vertical integrated production system to carry out the relevant design and planning. On December 10, 2024, it was announced that as part of the cooperation with Taiwan Semiconductor Manufacturing Company Limited (TSMC), the first process will be produced at TSMC and the second process will be produced at ATX. ROHM also plans to collaborate with ATX to produce in-vehicle GaN devices. The adoption of GaN devices in the automotive sector is expected to accelerate from 2026, and ROHM plans to further deepen its relationships with these partners while strengthening its internal development to accelerate the speed at which GaN devices in vehicles are brought to market.

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