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Automotive MOSFET_IPC100N04S5-1R9_OptiMOS™-5 Power Transistor

Automotive MOSFET_IPC100N04S5-1R9_OptiMOS™-5 Power Transistor

Source:our siteTime:2025-02-11Views:

Shenzhen Mingjiada Electronics Co., Ltd. Original Genuine Infineon Automotive Grade MOSFET_IPC100N04S5-1R9_OptiMOS™-5 Power Transistor 40V, N-Channel, 1.9 mΩ Max, PQNFDescripcinThe IPC100N04S5-1R9 is an N-channel MOSFET designed for automotive appli…

Shenzhen Mingjiada Electronics Co., Ltd. Original Genuine Infineon Automotive Grade MOSFET_IPC100N04S5-1R9_OptiMOS™-5 Power Transistor 40V, N-Channel, 1.9 mΩ Max, PQNF


Descripción

The IPC100N04S5-1R9 is an N-channel MOSFET designed for automotive applications. It adopts OptiMOS™ 5 technology and features low on-resistance, high switching speed, and high reliability, and is widely used in automotive motor drive, power management, LED lighting, etc. The IPC100N04S5-1R9 is an N-channel MOSFET designed for automotive applications.


Features

- OptiMOS™ - Power MOSFETs for automotive applications

- N-Channel - Enhanced Mode - Normal Levels

- AEC Q101 certified

- MSL1 Peak Reflow Temperature up to 260°C

- 175°C operating temperature

- Green product (RoHS compliant)

- 100% avalanche tested


Product Specifications

Model No.: IPC100N04S5-1R9

Type: N-Channel Enhancement MOSFET

Withstanding Voltage: 40V

Maximum on-resistance: 1.9mΩ (max), 1.6mΩ (typical, 10V drive)

Continuous drain current: 100A (Tc=25°C)

Pulsed drain current: 400A (Tc=25°C)

Avalanche energy: 130mJ (single pulse, at 50A)

Operating temperature range: -55°C~+175°C

Package: PG-TDSON-8-34 (surface mount)

IPC100N04S5-1R9.jpg

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