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(Supply, recycling) IGBT transistor (Infineon) AIKW30N60CTXKSA1 600V, 60A trench type field cut-off through hole TO247.

Overview:

TrenchStop™Series IGBT transistors By applying trench top-cell and field stop technologies, Infineon's TRENCHSTOP™ IGBT series significantly improves the dynamic and static performance of IGBT devices. The combination of the IGBT and the soft recovery emitter control diode further minimizes the on-off loss. This series of IGBTs balances the switching loss and the on-off loss, thus achieving maximum efficiency.

Features:

Minimum saturation pressure drop V ce(sat) to reduce conduction losses

Low switching loss

Because the device has a positive temperature coefficient at saturation voltage drop V ce(sat), it is easy to implement parallel switching function

The emitter control diode at both ends of IGBT in reverse parallel has strong soft recovery ability and fast speed

Durable and stable temperature characteristics

Low electromagnetic radiation

Low gate charge

Compact parameter distribution

AIKW30N60CTXKSA1 Technical parameters:

IGBT type: trench type field cut-off

Voltage-emitter breakdown (Max) : 600 V

Current-collector (Ic) (Max.) : 60 A

Current-collector pulse (Icm) : 90 A

Vce(on) (Max.) for different Vge and Ic: 2.05V @ 15V, 30A

Power - Max. : 187 W

Switching power: 690µJ (on), 770µJ (off)

Input type: Standard

Grid charge: 167 nC

Td (On/off) at 25°C: 23ns/254ns

Test conditions: 400V, 30A, 10.6ohm, 15V

Operating temperature: -40°C ~ 175°C (TJ)

Installation type: Through hole

Package/housing: TO-247-3

Supplier device package: PG-TO247-3-41

Typical applications:

Uninterruptible Power Supply (UPS)

Solar inverter

Motor control

Major household appliances

Other hard switch applications

If interested, please contact Mr. Chen:

Email: sales@hkmjd.com

Company website: www.hkmjd.com