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Transistor_IPT60R035CFD7_600V CoolMOS™ CFD7 Power Transistor

Transistor_IPT60R035CFD7_600V CoolMOS™ CFD7 Power Transistor

Source:our siteTime:2025-01-20Views:

Shenzhen Mingjiada Electronics Co., Ltd. New and Original Infineon Transistors_IPT60R035CFD7_600V CoolMOS™ CFD7 Power Transistor IGBT TRENCH 650V 90A TO247-3Infineons answer to resonant high power topologiesThe 600V CoolMOS™ CFD7 is a new high-volta…

Shenzhen Mingjiada Electronics Co., Ltd. New and Original Infineon Transistors_IPT60R035CFD7_600V CoolMOS™ CFD7 Power Transistor IGBT TRENCH 650V 90A TO247-3


Infineon's answer to resonant high power topologies

The 600V CoolMOS™ CFD7 is a new high-voltage superjunction MOSFET technology from Infineon featuring an integrated fast body diode, completing the CoolMOS™ 7 family. The CoolMOS™ CFD7 has a lower gate charge (Qg) and better turn-off performance. In addition, its reverse recovery charge (Qrr) is 69% lower than competitive products on the market. In addition, it has one of the shorter reverse recovery times (trr) in the market.


Features

-Ultrafast body diode

-Low threshold charging

-Best-in-class reverse recovery charge (Qrr)

-Improved MOSFET reverse diode

-Lowest RDS(On)*Qg and RDS(On)*Eoss

-Best-in-class RDS(on) in SMD and THD packages


Benefits

-Excellent high-load operation

-Highest reliability for resonant topologies

-Highest efficiency with insignificant usage/performance trade-offs

-Supports solutions that increase power density


Potential Applications

Suitable for softswitch topologies

Optimised for phase shifted full bridge (ZVS), LLC applications - Servers, telecoms, EVC charging, telecoms, EVC charging


Specification

Product Category: MOSFETs  

Technology: Si

Mounting Style: SMD/SMT

Package / Case: HSOF-8

Transistor Polarity: N-Channel

Number of channels: 1 Channel

Vds-Drain-source breakdown voltage: 650 V

Id-Continuous drain current: 67 A

Rds On-drain on-resistance: 35 mOhms

Vgs - gate-source voltage: - 20 V, + 20 V

Vgs th-Gate-source threshold voltage: 4 V

Qg-gate charge: 109 nC

Minimum operating temperature: - 55 C

Maximum operating temperature: + 150 C

Pd-Power dissipation: 351 W

Channel mode: Enhanced

IPT60R035CFD7.jpg

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