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Infineon BSM150GB120DN2 IGBT module Half bridge 1200 V 210 A 1250 W

Infineon BSM150GB120DN2 IGBT module Half bridge 1200 V 210 A 1250 W

Source:our siteTime:2025-01-17Views:

Overview‌BSM150GB120DN2 is an IGBT module produced by Infineon, mainly used in high voltage and high current application scenarios ‌. The module is in a half-bridge configuration, contains fast-current diodes and is packaged using an insulated metal…

Overview

‌BSM150GB120DN2 is an IGBT module produced by Infineon, mainly used in high voltage and high current application scenarios ‌. The module is in a half-bridge configuration, contains fast-current diodes and is packaged using an insulated metal substrate ‌.


Specifications

IGBT type: -

Configuration: Half bridge

Voltage-emitter breakdown (Max.) : 1200 V

Current - Collector (Ic) (Max.) : 210 A

Power - Max: 1250 W

Vce(on) (Max.) for different Vge and Ic: 3V@15V, 150A

Current-collector cutoff (Max.) : 2.8 mA

Input capacitance (Cies) for different Vce: 11 nF @ 25 V

Input: Standard

NTC thermistor: None

Operating temperature: 150°C (TJ)

Installation type: Base installation

Package/shell: Module

Supplier device package: Module

Basic product number: BSM150


‌Application field ‌

BSM150GB120DN2 is very suitable for frequency converter, inverter, welding machine, new energy vehicle, high-speed rail and other fields ‌.

BSM150GB120DN2.jpg

This paper introduces a FZ1600R12HP4 IGBT module produced by Infineon Return to
column Mingjiada Electronics——Supply [ON] NCV885201D1R2G Non-Synchronous Buck Controller

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