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Service Telephone:86-755-83294757
The IPB100N04S4-H2 device is an OptiMOS-T2 power-transistor by Infineon, which is a Power field-effect Transistor (MOSFET). The device has a robust linear operating mode and low RDS(on) that minimizes losses during operation, while providing a wide …
The IPB100N04S4-H2 device is an OptiMOS-T2 power-transistor by Infineon, which is a Power field-effect Transistor (MOSFET). The device has a robust linear operating mode and low RDS(on) that minimizes losses during operation, while providing a wide safe working area (SOA) that ensures no damage to the load at high surges .
Feature description
N channel - Enhanced mode
AEC certification
MSL1 peak reflux temperature up to 260°C
Operating temperature 175°C
Eco-friendly products (RoHS compliant)
100% avalanche tested
Advantages
At 40V, RDS (on) is the lowest value in the world
Very high impulse current capability
Very low switching power consumption and conduction power loss, resulting in extremely high thermal efficiency
Solid package, excellent quality, high reliability
Optimize the total grid charge for a smaller driver output stage
Potential application
OptiMOS-T2 40V is suitable for a variety of EPS motor controls, three-phase and H-bridge motors, HVAC fan controls, electric pumps, etc., especially in combination with PWM control.
The OptiMOS-T2 40V product is based on Infineon's advanced grooved grid technology and will be the benchmark for the next generation of energy-efficient, low-CO2, electric vehicle applications.
Time:2025-01-15
Time:2025-01-15
Time:2025-01-15
Time:2025-01-15
Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
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