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Supply Qorvo RF Transistors:GaAs pHEMTs,GaN HEMTs,SiC FETs,SiC JFETs

Shenzhen Mingjiada Electronics Co., Ltd. is a professional electronic components supplier. We specialise in high-end devices, RF devices, 5G devices, new energy ICs, high-end connectors, as well as some cold, out-of-stock and out-of-stock electronic components. We have established close cooperation with global well-known electronic component manufacturers to ensure that the components supplied are from regular channels with reliable quality.

GaAs pHEMTs

Qorvo offers a wide variety of discrete transistor components using our state-of-the-art, ultra-low-noise 0.15 µm pHEMT and 0.25 µm E-pHEMT processes. These discrete devices allow customers full control when designing the circuits of low noise amplifiers (LNAs). The various discrete FETs offer NF (min) as low as 0.15 dB and are usable up to 22 GHz. Matched pair transistors are also available and are ideal for balanced LNA designs.

GaN HEMTs

Qorvo offers a broad portfolio of gallium nitride (GaN) discrete transistor products with varying levels of power, voltage and frequency ratings, in both die-level and packaged solutions. Our products provide the high performance of GaN plus the convenience of industry-standard packaging, which speeds design and manufacturing — all backed by our industry-leading reliability.

SiC FETs

Qorvo's high-performance silicon carbide (SiC) FETs deliver best-in-class switching speed, lower switching losses, higher efficiency, standard thru-hole (including Kelvin) and surface mount packages, with excellent cost effectiveness. These FETs are based on a unique cascode configuration where a high-performance SiC fast JFET is co-packaged with a cascode optimized Si-MOSFET, enabling standard gate drive SiC device operation. The majority of these devices are AEC-Q101 qualified.

SiC JFETs

Qorvo's silicon carbide (SiC) JFETs are high-performance, normally-on JFET transistors with VDS-max ranging from 650 V to 1700 V. These SiC JFETs feature ultra-low on-resistance (RDS(on)) starting at just 4 mΩ, while low gate charge (QG) allows for further reductions in both conduction and switching losses.