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Shenzhen Mingjiada Electronics Co., LTD [Supply and Demand TI] LMG3522R030RQSR 650V 30mΩ GaN FET device driver.

Product Overview:

LMG3522R030RQSR 650V 30mΩ GaN FET features integrated driver and protection for switch-mode power converters. The LMG3522R030 integrates a silicon driver for switching speeds of up to 150V/ns. The TI GaN FET's integrated precision gate bias enables a higher switching SOA than a discrete silicon gate driver. This integration, combined with TI's low inductance package, provides clean switching and minimal ringing in hard switching power topologies. The adjustable grid drive strength allows the voltage swing rate to be controlled between 20V/ns and 150V/ns, which can be used to actively control EMI and optimize switching performance.

LMG3522R030 650V 30mΩ GaN FeTs feature advanced power management including digital temperature reporting and fault detection. Reported failures include overheating, overcurrent, and UVLO monitoring.

LMG3522R030RQSR Product Specifications:

Output configuration: Low end

Application: DC motor, general purpose

Interface: PWM

Load type: inductance, capacitance, resistance

Technology: NMOS

On-off resistance (typical) : 26 milliohm

Current - Output/channel: 38A

Current - Peak output: -

Voltage - Power supply: 7.5V ~ 18V

Voltage-load: 650V

Operating temperature: -40°C ~ 125°C (TJ)

Features: -

Fault protection: current limiting (adjustable), over temperature, short circuit, UVLO

Mounting type: surface mount type

Package/case: 52-VQFN, 52-VQFN (12x12)

LMG3522R030RQSR GaN FET device design can be used for:

Switching mode power converter

Merchant network and server Psus

Commercial electrical credit rectifier

Photovoltaic inverters and industrial motor drivers

Uninterruptible supply

If necessary, please contact Mr. Chen:

QQ: 1668527835

Tel: 13410018555

Email: chen13410018555@163.com

Company homepage: www.hkmjd.com