sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:N-Channel Power MOSFET
Brand:INFINEON
Particular Year:25+
Package:PG-TSDSON-8
Delivery Date:New and Original
Stock: 5000pcs
ISZ173N15NM6: 150V, OptiMOS™ 6 power MOSFET transistor, normal level, in SuperSO8 package
ISZ173N15NM6 specifications:
Series: OptiMOS™ 6
FET Type: N-channel
Technology: MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss): 150 V
Current at 25°C - Continuous Drain (Id): 7.9A (Ta), 48A (Tc)
Drive Voltage (Maximum Rds On, Minimum Rds On): 8V, 15V
On-Resistance at Different Id and Vgs (Maximum): 16.3 mΩ @ 16A, 15V
Vgs(th) at Different Id (Maximum): 4V @ 35µA
Gate Charge (Qg) at Different Vgs (Maximum): 19.2 nC @ 10 V
Vgs (Maximum): ±20V
Input capacitance (Ciss) at different Vds (maximum): 1300 pF @ 75 V
Power dissipation (maximum): 25W (Ta), 94W (Tc)
Operating temperature: -55°C to 175°C (TJ)
Mounting type: Surface mount
Supplier device package: PG-TSDSON-8 FL
Package/housing: 8-PowerTDFN
ISZ173N15NM6 Product Features:
RDS(on) 42% lower than OptiMOS™
FOMg 20% lower than OptiMOS™ 5
Lowest Qrr in the industry at 150 V
Improved diode softness compared to OptiMOS™ 5
Vgs(th) strictly controlled within +/-500 mV range
High avalanche strength
Maximum Tj of 175°C
ISZ173N15NM6 Applications:
Energy storage systems
Telecom infrastructure
Photovoltaic
Industrial power supplies
Server power supplies
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