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The CM35MXUA-24T1 is an IGBT module in Mitsubishi Electric's T1 series, featuring NX-type packaging and CIB topology, suitable for applications such as industrial variable frequency drives, servo drives, and new energy power generation.

This module employs the 7th-generation CSTBT™ (Carrier Storage Trench Gate Bipolar Transistor) technology, featuring low switching losses and low on-state voltage drop characteristics. It also integrates an RFC diode to optimise reverse recovery performance and reduce EMI noise.

CM35MXUA-24T1 Features

7th-generation IGBT technology  

CSTBT™ structure reduces conduction loss and switching loss, improving energy efficiency.  

RFC diode optimises reverse recovery characteristics and suppresses voltage spikes.  

CIB (Converter-Inverter-Brake) topology  

Integrated rectifier, inverter, and brake unit, suitable for motor drives, inverters, and other applications.

NX-type packaging advantages

Internal inductance reduced by 30% (compared to previous-generation products), optimising high-frequency switching performance.

Resin insulation & copper substrate integration, improving thermal cycle life and enhancing long-term reliability.

Industrial-grade reliability

1200V rated voltage (VCES), suitable for AC690V/DC1000V systems.

35A rated current (IC), supporting medium and small power applications.

2500Vrms insulation withstand voltage (Viso), compliant with industrial safety standards.

Technical Specifications

Model: CM35MXUA-24T1

Package Type: NX-type (CIB A package)

Rated Voltage (VCES): 1200V

Rated current (IC): 35A  

Insulation withstand voltage (Viso): 2500Vrms  

IGBT technology: 7th generation CSTBT™  

Diode technology: RFC diode  

Operating temperature: -40°C to +125°C

CM35MXUA-24T1 Typical Applications

Industrial inverters: servo drives, PLC control, elevator inverters.  

Renewable energy generation: photovoltaic inverters, wind power converters.  

UPS power supplies: data centres, industrial uninterruptible power supplies.

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