sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:MOSFET Modules
Brand:Microchip
Particular Year:25+
Package:SP1-12
Delivery Date:New and original
Stock: 1000pcs
The APTM50H15FT1G is a power module launched by Microchip, mainly used in full-bridge MOSFET power module applications. The module is packaged in SP1, which helps reduce parasitic inductance and increase switching speed .
Technical specifications of APTM50H15FT1G
Technology: MOSFET (Metal Oxide)
Configuration: 4 N channels (full bridge)
FET function: -
Drain-source voltage (Vdss) : 500V
Current at 25°C - Continuous drain (Id) : 25A
The on-resistance (maximum value) at different ids and Vgs: 180 milliohms @ 21A, 10V
Vgs(th) (maximum value) at different ids: 5V@1mA
Gate charge (Qg) (maximum value) at different Vgs: 170N@10V
Input capacitance (Ciss) (maximum value) at different Vds: 5448pF @ 25V
Power - Maximum: 208W
Operating temperature: -40°C to 150°C (TJ)
Installation type: Base installation
Package/Shell: SP1
Application scope
The APTM50H15FT1G is suitable for switching power supplies, industrial applications and motor control and other fields .
Model
Brand
Package
Quantity
Describe
ON
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2000
Power Integrated Module (PIM) Boost Converter Stage for Multiphase and Semi-Bridgeless PFC
ON
Module
2000
Power Integrated Module (PIM) Boost Converter Stage for Multiphase and Semi-Bridgeless PFC
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