sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:N-Channel Power MOSFET
Brand:INFINEON
Particular Year:24+
Package:PG-TO247-3
Delivery Date:New and Original
Stock: 10000pcs
The IPW60R120P7 is a 600V CoolMOS™ P7 superjunction (SJ) MOSFET. 600V CoolMOS™ P7 superjunction (SJ) MOSFETs are the successor to the 600V CoolMOS™ P6 series. It continues to balance high efficiency with ease of use in the design process. The 7th generation CoolMOS™ platform features best-in-class R onxA and inherently low gate charge (Q G) to ensure high efficiency.
Feature Description
Efficiency
600V P7 supports excellent FOM R DS(on)xE oss and R DS(on)xQ G
Easy to use
Integrated ESD diode from 180mN and above R DS(on)
Integrated gate resistor R G
Ruggedised body diodes
Extensive product line covering through-hole and surface packages
Standard and industrial grade parts available
Parameters
Drain-source voltage (Vdss): 600V
Continuous drain current (Id): 16A
On-resistance (RDS(on)): 120mΩ @ 10V, 8.2A
Power Dissipation (Pd): 95W
Threshold Voltage (Vgs(th)): 3.5V @ 0.41mA
Gate Charge (Qg): 36nC @ 10V
Input Capacitance (Ciss@Vds): 1.544nF @ 400V
Reverse Transfer Capacitance (Crss): 526pF @ 400V
Operating Temperature: -55°C ~ +150°C
Package: TO-247-3
Potential Applications
TV Power Supplies
Industrial SMPS
Servers
Communication
Lighting
Model
Brand
Package
Quantity
Describe
ST
TO-263
32000
N-channel 100 V, 9 mOhm typical, 110 A STripFET II power MOSFET, D2PAK package
ST
PowerFLAT 8x8
3000
N-channel 600 V, 175 mOhm typical value, 15 A MDmesh DM6 power MOSFET, PowerFLAT 8x8 HV package
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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