sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IRF3808STRRPBF
Data Manual:IRF3808STRRPBF.pdf
Brand:IR
Particular Year:11+
Package:TO-263
Delivery Date:New and Original
Stock: 243084pcs
This Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating. This combination makes the design an extremely efficient and reliable choice for use in a wide variety of applications.
Product specifications
FET Type N-channel
Technology MOSFET (metal oxide)
Drain source voltage (Vdss) 75 V
Current at 25°C - Continuous Drain (Id) 106A (Tc)
Drive voltage (max Rds On, min Rds On) 10V
On-resistance at different Id, Vgs (max) 7 milliohms @ 82A, 10V
Vgs(th) at different Id (max) 4V @ 250µA
Gate charge (Qg) at different Vgs (max) 220 nC @ 10 V
Vgs (max) ±20V
Input capacitance (Ciss) at different Vds (max) 5310 pF @ 25 V
FET function -
Power dissipation (max) 200 W (Tc)
Operating temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Type
Supplier Device Package D2PAK
Typical Applications
Industrial Automotive
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IR, the International Rectifier Company, is a global leader in power semiconductors and management solutions.International Rectifier (IR) is a global leader in power semiconductors and management solutions. IRs analog and mixed-signal integrated circu…
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This advanced planar stripe HEXFET power MOSFET uses the latest processing technology to achieve an extremely low on-resistance per unit silicon area. Other features of this HEXFET power MOSFET are a junction operating temperature of 175C, low RθJC,…Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
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