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This advanced planar stripe HEXFET ® power MOSFET uses the latest processing technology to achieve an extremely low on-resistance per unit silicon area. Other features of this HEXFET power MOSFET are a junction operating temperature of 175°C, low RθJC, fast switching speed and improved repetitive avalanche rating. This combination makes the design an extremely efficient and reliable choice for use in a variety of applications.

Specification parameters

ET Type N-channel   

Technology MOSFET (metal oxide)   

Current at 25°C - continuous drain (Id) 106A (Tc)   

Drive voltage (max Rds On, min Rds On) 10V   

On-resistance at different Id, Vgs (max) 7 milliohms @ 82A, 10V   

Vgs(th) at different Id (max) 4V @ 250µA   

Vgs (max) ±20V   

FET function -   

Power dissipation (max) 200W (Tc)   

Operating Temperature -55°C ~ 175°C (TJ)   

Mounting Type Surface Mount Type   

Supplier Device Package D2PAK   

Package/Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB   

Drain source voltage (Vdss) 75 V   

Gate charge (Qg) at different Vgs (max) 220 nC @ 10 V   

Input capacitance (Ciss) at different Vds (max.) 5310 pF @ 25 V 

Application areas

High efficiency synchronous rectification

Switching power supplies

Uninterruptible power supplies

High-speed power switching

Step-up hard switching and high frequency circuits

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