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Trade Name:MSCSM120DAM31CTBL1NG
Brand:Microchip
Particular Year:24+
Package:Module
Delivery Date:New and Orignal
Stock: 1000pcs
The MSCSM120DAM31CTBL1NG MOSFET power modules are high efficiency converters with a thick copper Si3N4 substrate for improved thermal performance. These modules feature a thin design for direct mounting to a heat sink (isolated package), internal thermistor (for temperature monitoring), and extended temperature range. Reverse operating voltage (VR) is 1.2kV, gate-source voltage range (VGS) is -10V to 25V, power dissipation (Pd) is 310W/560W, and continuous drain current (Id) is 79A/150A.
Product Attributes
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain-Source Voltage (Vdss): 1200 V
Current at 25°C - Continuous Drain (Id): 79A
Drive Voltage (Max Rds On, Min Rds On): 20V
On Resistance (Max) at Different Id, Vgs: 31 milliohms @ 40A, 20V
Vgs(th) at different Id (max): 2.8V @ 1mA
Gate Charge (Qg) at Vgs (max): 232 nC @ 20 V
Vgs (max): +25V, -10V
Input capacitance (Ciss) at different Vds (max): 3020 pF @ 1000 V
Power Dissipation (Max): 310W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package/Housing: Module
Applications
●High-reliability power systems
●High efficiency AC/DC and DC/AC converters
●Motor control
●AC switches
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Microchip Technology Incorporated (Nasdaq: MCHP) Microchip Semiconductor is the worlds leading supplier of microcontrollers and analog semiconductors, providing low-risk product development, lower system totals for thousands of consumer products world…
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