sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:DMT47M2SFVWQ
Data Manual:DMT47M2SFVWQ.pdf
Brand:Diodes
Particular Year:23+
Package:8-PowerVDFN
Delivery Date:New and Original
Stock: 8000pcs
DMT47M2SFVWQ N-channel MOSFET is a 40V enhanced MOSFET with excellent QG ×。 Low RDS (ON) ensures minimal loss in the on state. Due to 100% undamped inductive switching and production testing, this MOSFET ensures reliable and robust final application.
40V integrated circuit chip DMT47M2SFVWQ 150 ° C N-channel enhanced MOSFET
Part Number: DMT47M2SFVWQ
Rds open drain source resistance: 7.5 milliohms
Vgs gate source voltage: -20 V,+20 V
Vgs th gate source threshold voltage: 4 V
Qg gate charge: 12.1 nC
Minimum operating temperature: -55 degrees Celsius
Maximum operating temperature:+150 degrees Celsius
Pd power consumption: 2.67 W
Product Features
Low RDS (ON) - ensures maximum reduction of state loss
100% undamped induction switch, tested in production to ensure more reliable and robust final application
Wettable wings for improving optical detection
Product Application
Motor control
Power management function
DC-DC converter
Model
Brand
Package
Quantity
Describe
A: all online goods on the shelves can be ordered online, but considering the large liquidity of spot inventory, it is not possible to achieve 100% accuracy at present. In case of any abnormality, you can contact our company online and give the corresponding solution.
A: our self-supporting products are from cooperative domestic and foreign original factories or authorized agents, and the source can be traced to ensure the original and authentic products.
A: at present, our self-employed brands TI,ST,ADI,NXP,LATTICE,CYPRESS,INFINEON,XILINX and other first-line brands. Other channels are the original factory and agency channels. If necessary, we can communicate and confirm according to the specific brand and model.
A: You can inquire through the website, or by phone and email.
A: the delivery date is marked in most commodity information. You can estimate the delivery time of the commodity according to the delivery date. The specific arrival time depends on the warehouse where the commodity is located and the logistics mode you choose.
A: you can issue ordinary invoices for individual users or special VAT invoices for enterprise users.
Founded in 1966, Diodes Inc. is a Nasdaq-listed company in the United States. It is a transfer investment company of Dunnan Technology. It is mainly engaged in the manufacture and production of discrete semiconductor components. Diodes Inc. has a part…
DMWSH120H43SM4
The DMWSH120H43SM4 is a 1200V, 72.7A single n-channel silicon carbide power MOSFET in a 4-pin TO-247 package designed TO minimize on-resistance and maintain excellent switching performance. These power MOSFETs are ideal for use in EV high-power DC-DC …DMWSH120H43SM3
The DMWSH120H43SM3 is a 1200V, 72.7A single n-channel silicon carbide power MOSFET designed to minimize on-resistance and maintain excellent switching performance. These 1200V power MOSFETs are ideal for use in EV high-power DC-DC converters, EV charg…DMWSH120H90SM3
The DMWSH120H90SM3 is a 1200V, 41A silicon carbide power MOSFET designed to minimize on-resistance and maintain excellent switching performance. These 1200V power MOSFETs are ideal for use in EV high-power DC-DC converters, EV charging systems, solar …DMWSH120H90SM3Q
The DMWSH120H90SM3Q is a 1200V, 41A N-channel silicon carbide power MOSFET designed to minimize on-resistance and maintain excellent switching performance. The MOSFETs are ideal for EV high-power DC-DC converters, EV charging systems, solar inverters,…DMWSH120H90SM4Q
DMWSH120H90SM4Q 1200V N-channel Silicon Carbide power MOSFETs are designed to minimize on-resistance while maintaining excellent switching performance, making them ideal for high-efficiency power management applications.Specifications of DMWSH120H90SM…DMWSH120H28SM4Q
DMWSH120H28SM4Q 1200V N-channel Silicon Carbide power MOSFET is designed to minimize on-resistance and maintain excellent switching performance. With low input capacitance, the MOSFET is ideal for use in EV high-power DC-DC converters, EV charging sys…Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
CopyRight ©2022 Copyright belongs to Mingjiada Yue ICP Bei No. 05062024-12
Official QR Code
Links: