sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:S80KS2564GACHV043
Data Manual:S80KS2564GACHV043.pdf
Brand:INFINEON
Particular Year:23+
Package:49-FBGA
Delivery Date:New original
Stock: 2000pcs
S80KS2564GACHV043 is a high-speed CMOS, self-refresh DRAM, with HYPERBUS™ extended-IO. The DRAM array uses dynamic cells that require periodic refresh.
Feature
HYPERBUS™ extended-IO
1.7 to 2.0 V (1.8 typ.) interface support
Single-ended clock (CK) - 20 bus signals
Optional differential clock
21 bus signals- Chip Select
Hardware reset
Bidirectional read-write data strobe
Output at the start of all transactions to indicate refresh latency
Output during read transactions as read data strobe
Input during write transactions as write data mask
200 MHz maximum clock rate
DDR - transfers data on both edges of the clock
Data throughput up to 800 MBps (6,400 Mbps)
Configurable burst characteristics
Hybrid option
one wrapped burst followed by linear burst- Configurable output drive strength
Model
Brand
Package
Quantity
Describe
Winbond
WLCSP-49
2000
PSRAM (Pseudo-SRAM) Memory IC 256Mb HyperBus 200 MHz 35 ns 49-WFBGA (4x4)
INFINEON
49-FBGA
3000
PSRAM (Pseudo-SRAM) Memory IC 256Mb HyperBus 200 MHz 35 ns 49-FBGA (8x8)
INFINEON
24-FBGA
3000
PSRAM (Pseudo-SRAM) memory IC 64Mbit SPI-8 I/O 200 MHz 35 ns 24-FBGA (6x8)
INFINEON
24-FBGA
3000
PSRAM (Pseudo-SRAM) memory IC 64Mbit SPI-8 I/O 200 MHz 35 ns 24-FBGA (6x8)
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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