sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:IPP65R090CFD7
Data Manual:IPP65R090CFD7.pdf
Brand:INFINEON
Particular Year:23+
Package:TO-220-3
Delivery Date:New and Original
Stock: 1000pcs
The IPP65R090CFD7 extends the voltage ratings offered by the CFD7 family and is a successful alternative to the 650VCoolMOS™CFD2. The 650VCooMOS™CFD7 family offers improved switching performance and excellent thermal performance, with the highest efficiencies in resonant switching topologies, such as LLCs and phase-shifted full (ZVS). As part of Infineon's fast body diode portfolio, this new product family combines all the benefits of fast switching with improved hard commutation robustness. coolMOS™CFD7 technology meets the highest efficiency and reliability standards and further supports high power density solutions.
Product Attributes
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain-Source Voltage (Vdss): 650 V
Current at 25°C - Continuous Drain (Id): 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
On Resistance (Max) at Different Id, Vgs: 90 milliohms @ 12.5A, 10V
Vgs(th) at different Id (max): 4.5V @ 630µA
Gate Charge (Qg) (max) at varying Vgs: 53 nC @ 10 V
Vgs (max): ±20V
Input capacitance (Ciss) at varying Vds (max): 2513 pF @ 400 V
Power Dissipation (Max): 127W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package/Housing: TO-220-3
Applications
● Electric vehicle fast charging
● Cellular communication infrastructure
● Server power supplies
● Solar system solutions
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Infineon Technologies was formally established on April 1, 1999 in Munich, Germany, and is one of the worlds leading semiconductor companies. Its predecessor was the semiconductor division of Siemens Group, which became independent in 1999 and went pu…
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