sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:AIMW120R035M1HXKSA1
Data Manual:AIMW120R035M1HXKSA1.pdf
Brand:INFINEON
Particular Year:23+
Package:TO-247-3
Delivery Date:New and Original
Stock: 1000pcs
AIMW120R035M1HXKSA1 Offering 52A drain current (ID) and 35mΩ on-resistance, Infineon's automotive-grade 1200V Silicon Carbide trench MOSFETs are designed specifically for in-vehicle charger/PFC and booster/DC-DC converter applications. infineon Technologies CoolSiC™. Automotive Grade 1200V Silicon Carbide Trench MOSFETs offer higher power density, higher frequency and higher efficiency.
Product Attributes
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain-Source Voltage (Vdss): 1200 V
Current at 25°C - Continuous Drain (Id): 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V
On Resistance (Max) at Different Id, Vgs: 46 milliohms @ 25A, 18V
Vgs(th) at different Id (max): 5.7V @ 10mA
Gate Charge (Qg) at Vgs (max): 59 nC @ 18 V
Vgs (max): +23V, -7V
Input capacitance (Ciss) at different Vds (max): 2130 pF @ 800 V
Power Dissipation (Max): 228W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-41
Package/Housing: TO-247-3
Applications
● Car chargers/PFC
● Boosters/DC-DC converters
● Auxiliary inverters
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