sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:GNP1070TC-ZE2
Data Manual:GNP1070TC-ZE2.pdf
Brand:ROHM
Particular Year:23+
Package:DFN8080K
Delivery Date:New and Original
Stock: 1000pcs
The GNP1070TC-ZE2 uses low on-resistance and high-speed switching to improve power conversion efficiency and reduce size. This highly reliable GNP1 FET features built-in ESD protection and excellent heat dissipation for easy installation. Applications include high switching frequency and high density converters.
Product Attributes
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain-Source Voltage (Vdss): 650 V
Current at 25°C - Continuous Drain (Id): 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 5.5V
On Resistance (Max) at Different Id, Vgs: 98 milliohms @ 1.9A, 5.5V
Vgs(th) at different Id (max): 2.4V @ 18mA
Gate Charge (Qg) at Vgs (max): 5.2 nC @ 6 V
Vgs (max): +6V, -10V
Input capacitance (Ciss) at different Vds (max): 200 pF @ 400 V
Power Dissipation (max): 56W (Tc)
Operating temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DFN8080K
Package/case: 8-PowerDFN
Applications
● High switching frequency converters
● High-density converters
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ROHM Co., Ltd. is one of the worlds leading semiconductor manufacturers, headquartered in Kyoto, Japan, ROHM designs and manufactures semiconductors, integrated circuits and other electronic components. These components have a place in the rapidly cha…
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