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Toshiba's π-MOS VIII MOSFETs are 10V gate-driven, single N-channel devices based on Toshiba's eighth-generation planar semiconductor process, which combines a high level of cell integration with optimised cell design. This technology reduces gate charge and capacitance compared to previous generations without losing the advantage of low RDS(ON). Rated at 800V and 900V, these MOSFETs are targeted at applications such as flyback converters in LED lighting, auxiliary power supplies, and other circuits requiring less than 5.0A of current switching. The devices are available in a standard TO-220 through-hole form factor and surface mount DPAK package.

TK10A80E Product Attributes

FET Type: N-Channel  

Technology: MOSFET (Metal Oxide)  

Drain-source voltage (Vdss): 800 V  

Current at 25°C - Continuous Drain (Id): 10A (Ta)  

Drive voltage (max. Rds On, min. Rds On): 10V  

On Resistance (Max) at Different Id, Vgs: 1 Ohm @ 5A, 10V  

Vgs(th) at different Id (max): 4V @ 1mA  

Gate Charge (Qg) (max) at varying Vgs: 46 nC @ 10 V  

Vgs (max): ±30V  

Input capacitance (Ciss) at varying Vds (max): 2000 pF @ 25 V  

FET Function: -  

Power Dissipation (Max): 50W (Tc)  

Operating Temperature: 150°C (TJ)  

Mounting Type: Through Hole  

Supplier Device Package: TO-220SIS  

Package/Housing: TO-220-3 Complete Package

Applications

Switching regulators

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