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Product Description:N Channel 600 V 47A (Tc) 278W (Tc) PG-HDSOP-10-1
Package:PG-HDSOP-10Product Description:Silicon Carbide (SiC) MOSFET – EliteSiC, 32 mohm, 650 V, M3S, TO-247-4L
Package:TO-247-4Product Description:1200 V Automotive grade Silicon Carbide Power MOSFET, 27 Mω, 56 A, HiP247
Package:HiP247-3Product Description:1200V, 34mΩ, CoolSiC™ MOSFET discrete transistor, TO-247-4
Package:TO-247-4Product Description:1200V, 53mΩ, CoolSiC™ MOSFET discrete transistor, TO-247-4
Package:TO-247-4Product Description:OptiMOS™ 5 power MOSFET 80V for telecom applications
Package:TDSON-8Product Description:650 V G5 GaN HEMT - gallium nitride transistor
Package:PG-LSON-8Product Description:GaN HEMT - Gallium nitride transistor 100 V G3, 2.4 mΩ
Package:PG-TSON-6Product Description:GaN HEMT - Gallium nitride transistor 100 V G3, 2.4 mΩ
Package:PG-VSON-6Product Description:GaN HEMT - Gallium nitride transistor 86 A 80 V G3, 1.8 mΩ
Package:PG-TSON-6Product Description:GaN HEMT - Gallium nitride transistor 99 A 60 V G3, 1.3 mΩ
Package:PG-TSON-6Product Description:GaN HEMT - Gallium nitride transistor 43 A 200 V G3, 6.7 mΩ
Package:PG-TSON-6Product Description:GaN HEMT - Gallium nitride transistor 71 A 120 V G3, 2.7mΩ
Package:PG-TSON-6Product Description:GaN HEMT - Gallium nitride transistor 100 V G3, PQFN 3x3,8 mΩ
Package:PG-TSON-4Product Description:GaN HEMT - Gallium nitride transistor 100 V G3, PQFN 3x3,8 mΩ
Package:PG-VSON-4Product Description:GaN HEMT - Gallium nitride transistor 100 V G3, PQFN 3x3, 5 mΩ
Package:PG-TSON-4Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
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