sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:DRAM Memory
Brand:Kingston
Particular Year:24+
Package:FBGA-200
Delivery Date:New and Original
Stock: 2000pcs
D0811PM2FDGUKW-U LPDDR4 DRAM devices are packaged in FBGA-200 and have 8Gbits die density. These DRAM devices feature Auto Temperature Compensated Self-Refresh (ATCSR) by a built-in temperature sensor and per bank refresh.
Specifications Of D0811PM2FDGUKW-U
Memory Size: 8 Gbit
Data Bus Width: 64 bit
Maximum Clock Frequency: 1.6 GHz
Package/Case: FBGA-200
Organisation: 64 M x 8
Access Time: 3.5 ns
Supply Voltage - Min: 1.06 V
Supply Voltage - Max: 1.95 V
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 95 C
Features Of D0811PM2FDGUKW-U
Low power consumption
Per Bank Refresh
Partial Array Self-Refresh (PASR)– Bank Masking– Segment Masking
Auto Temperature Compensated Self-Refresh– (ATCSR) by built-in temperature sensor
All bank auto refresh and directed per bank autorefresh supported
Double-data-rate architecture; two data transfers perone clock cycle
Differential clock inputs (CK_t and CK_c)
Bi-directional differential data strobe(DQS_tandDQS_c)
Commands entered on both rising and falling CK_tedge; data and data mask referenced to both edgesof DQS_t
DMI pin support for write data masking and DBIdcfunctionality
Model
Brand
Package
Quantity
Describe
Kingston
FBGA-200
3000
Low Power 64Gbit LPDDR4x Dynamic Random Access Memory (DRAM) IC
SAMSUNG
FBGA-200
2000
64Gbit LPDDR4X Dynamic Random Memory (DRAM) IC For Mobile Devices
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D1611PM3BDGUI-U LPDDR4 FBGA Low power DRAMInstructions:Kingstons discrete Low Power Double Data Rate 4 (LPDDR4) dynamic random access memory (DRAM) is designed to meet the needs of embedded applications and provide high-speed options with lower power …Contact Number:86-755-83294757
Enterprise QQ:1668527835/ 2850151598/ 2850151584/ 2850151585
Business Hours:9:00-18:00
E-mail:sales@hkmjd.com
Company Address:Room1239, Guoli building, Zhenzhong Road, Futian District, Shenzhen, Guangdong
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