sales@hkmjd.com
Service Telephone:86-755-83294757
Trade Name:MT53E1G64D4HJ-046 AAT:C
Data Manual:MT53E1G64D4HJ-046 AAT:C.pdf
Brand:Micron
Particular Year:23+
Package:556-TFBGA
Delivery Date:New original
Stock: 1000pcs
MT53E1G64D4HJ-046 AAT:C 64Gb mobile Low power LPDDR4X SDRAM with Low voltage is a high-speed CMOS dynamic random access storage device with an internal configuration of 1G x 64. The Micron LPDDR4 memory is optimized to address power consumption in battery-powered applications. The peak bandwidth of these memory devices is 33% faster than DDR4. LPDDR4 memory power consumption in standby mode is reduced to 1/5 compared to standard DRAM, making these devices suitable for handheld devices, battery-powered applications and ultra-portable devices.
Product Attributes:
Memory type: volatile
Memory format: DRAM
Technology: SDRAM - Mobile LPDDR4X
Storage capacity: 64Gb
Memory organization: 1G x 64
Memory interface: parallel
Clock frequency: 2.133GHz
Write cycle time - word, page: 18ns
Access time: 3.5 ns
Voltage - Power supply: 1.06V ~ 1.17V
Operating temperature: -40°C ~ 105°C (TC)
Mounting type: Surface mount type
Package/case: 556-TFBGA
Supplier Package: 556-WFBGA (12.4x12.4)
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Micron is a world-renowned supplier of semiconductor memory solutions. The companys memory solutions are used in computers and peripherals, consumer electronics, CAD/CAM, communications, office automation, network and data processing, graphic displays…
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MT29F8T08EULCHD5-R:C is ideal for high-performance, high-endurance and low-power small form-factor applicationseets IoT, automotive and emerging embedded application demands.FeatureWrite Protect is a basic, temporary security feature whereby the entir…Contact Number:86-755-83294757
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